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PSMN7R0-100ES

Part No PSMN7R0-100ES
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V I2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 125nC @ 10V
Max Input Capacitance 6686pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 269W (Tc)
Maximum Rds On at Id,Vgs 6.8 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 210296-PSMN7R0-100ES
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN7R0-100ES CAD Model

Description

PSMN7R0-100ES - NXP Power MOSFET

The PSMN7R0-100ES is a high-performance, low-threshold N-channel enhancement-mode Power MOSFET produced by NXP Semiconductors. Designed to deliver efficiency and power density, this MOSFET is an ideal choice for a wide range of applications, including power supply, DC-DC converters, motor drives, lighting, and industrial applications.

This Power MOSFET is notable for its extremely low on-state resistance (R<sub>DS(on)), which stands at just 7.0 mΩ at V<sub>GS = 10 V, providing an excellent efficiency profile for high-power applications. The device can handle continuous drain currents up to 100 A, making it suitable for handling high current loads without compromising performance.

The PSMN7R0-100ES is housed in a robust and compact LFPAK56 (Power-SO8) package, which is engineered to offer a high level of thermal performance, ensuring reliability even under high power and temperature conditions. The package's design also facilitates improved power density and space-saving on PCBs, which is critical for modern compact electronic assemblies.

With a maximum drain-source voltage (V<sub>DS) of 100 V, the PSMN7R0-100ES provides a good balance between breakdown voltage and R<sub>DS(on), which is essential for a variety of switching applications. Additionally, the device features a fast switching speed and a low gate charge (Q<sub>G), which further enhances its suitability for high-frequency circuits and reduces switching losses.

The MOSFET also incorporates advanced silicon technology that offers improved avalanche ruggedness and enhanced safe operating area (SOA), which is crucial for reliable operation under extreme conditions. Furthermore, the PSMN7R0-100ES is characterized by a low threshold voltage (V<sub>th), making it compatible with low-voltage drive signals and easier to drive in various circuit designs.

Overall, the PSMN7R0-100ES from NXP is a versatile and reliable component that meets the stringent requirements of modern power electronics, offering designers a combination of efficiency, power handling, and thermal performance in a compact footprint.

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