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PSMN7R6-60PS

Part No PSMN7R6-60PS
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 92A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 38.7nC @ 10V
Max Input Capacitance 2651pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 149W (Tc)
Maximum Rds On at Id,Vgs 7.8 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 090611-PSMN7R6-60PS
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN7R6-60PS CAD Model

Description

Product Overview: NXP PSMN7R6-60PS MOSFET

The NXP PSMN7R6-60PS is a high-performance, N-channel enhancement mode field-effect transistor (MOSFET) designed for use in a wide range of applications. This power MOSFET is part of the NXP's NextPowerS3 portfolio, offering exceptional efficiency and thermal performance. It is particularly suitable for power supply, DC-DC converters, motor drives, and other power management tasks.

Key Features

  • Low On-State Resistance (R<sub>DS(on)): The device features a very low on-state resistance of 7.6 mΩ at V<sub>GS = 10 V, which translates to reduced conduction losses and improved overall efficiency.
  • High Continuous Drain Current (I<sub>D): With a continuous drain current of 100 A, this MOSFET can handle high current applications with ease.
  • 60V Drain-to-Source Breakdown Voltage (V<sub>DSS): The breakdown voltage rating ensures reliable operation in circuits with high voltage stress.
  • Fast Switching Performance: The PSMN7R6-60PS has been optimized for fast switching, reducing switching losses and making it ideal for high-frequency applications.
  • Enhanced Thermal Performance: The device's package is designed for excellent thermal performance, ensuring reliability even under high-power operation.
  • Robust Body Diode: The MOSFET comes with a strong and fast body diode, providing efficient reverse recovery characteristics.

Applications

The versatility of the PSMN7R6-60PS MOSFET makes it well-suited for various applications, including:

  • Power supplies for servers, telecom, and industrial uses
  • DC-DC converters for a variety of electronic equipment
  • Motor control systems in automotive and industrial settings
  • Power management tasks where efficiency is critical

Quality and Reliability

NXP Semiconductors is known for its commitment to quality, and the PSMN7R6-60PS is no exception. It is designed to meet the rigorous demands of modern electronic systems, providing dependable performance and a long operational lifespan. Whether for commercial or industrial applications, this MOSFET is an excellent choice for designers looking to enhance the efficiency and reliability of their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7761 $62.1635
80+ $1.4574 $116.5920
125+ $1.4118 $176.4750
170+ $1.3663 $232.2710
220+ $1.3208 $290.5760
295+ $1.1841 $349.3095
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,830 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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