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PSMN9R8-30MLC,115

Part No PSMN9R8-30MLC,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A LFPAK33
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.95V @ 1mA
Max Gate Charge 10.9nC @ 10V
Max Input Capacitance 690pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 9.8 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK33
Dimension SOT-1210, 8-LFPAK33 (5-Lead)
Win Source Part Number 026915-PSMN9R8-30MLC,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN9R8-30MLC,115 CAD Model

Description

Introducing the PSMN9R8-30MLC,115 MOSFET from NXP Semiconductors

The PSMN9R8-30MLC,115 is a high-performance, N-channel enhancement mode Field-Effect Transistor (FET) designed by NXP Semiconductors, a leader in the semiconductor industry. This MOSFET is a part of NXP's extensive portfolio, offering efficient power management solutions for a wide range of applications. The PSMN9R8-30MLC,115 is specifically engineered to address the increasing demands of modern electronic circuits, providing low on-state resistance, high switching speeds, and exceptional thermal performance.

Key Features

  • Low On-State Resistance (R<sub>DS(on)): The device boasts an extremely low on-state resistance of only 9.8 mΩ at a gate-source voltage of 10V, which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
  • High Continuous Drain Current (I<sub>D): With a robust continuous drain current of up to 100A, this MOSFET can handle high current loads, making it ideal for power-intensive applications.
  • 30V Drain-Source Breakdown Voltage (V<sub>DSS): The breakdown voltage of 30V ensures safe operation under typical circuit conditions, providing a reliable solution for a variety of power management tasks.
  • Enhanced Thermal Performance: The PSMN9R8-30MLC,115 comes in a compact, surface-mount LFPAK33 package, which offers excellent thermal conduction thanks to its exposed drain pad. This feature allows for efficient heat dissipation, ensuring stable operation even under high power and temperature conditions.
  • Fast Switching Speeds: Engineered for high-speed switching applications, this MOSFET minimizes switching losses and enables high-frequency operation, which is critical for efficient power supplies and DC-DC converters.

Applications

The versatility of the PSMN9R8-30MLC,115 MOSFET makes it suitable for a broad spectrum of applications, including:

  • DC-DC Converters
  • Power Supplies
  • Motor Drives
  • Automotive Electronics
  • Power Management Systems

With its combination of low on-state resistance, high current capability, and fast switching speeds, the PSMN9R8-30MLC,115 from NXP Semiconductors is a reliable and efficient choice for designers looking to optimize power management in their next project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3911 $58.6650
320+ $0.3659 $117.0880
495+ $0.3534 $174.9330
705+ $0.3280 $231.2400
920+ $0.3155 $290.2600
1,145+ $0.3028 $346.7060
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Availability: 3,000 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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