The NXP RB751S40@115 is a high-performance Schottky barrier diode designed for applications requiring fast switching and low forward voltage drop. This diode is encapsulated in a small SOD-523 (SC-79) surface-mounted device (SMD) plastic package, which makes it ideal for high-density circuit board designs.

With its low forward voltage of typically 0.37 V at IF = 1 mA and a maximum of 0.4 V at IF = 15 mA, the RB751S40@115 ensures high efficiency in your circuit, minimizing power loss and improving overall system performance. This feature is particularly beneficial in power-sensitive applications such as portable and battery-operated devices.

The diode offers a continuous reverse voltage (VR) of 40 V, making it suitable for a wide range of applications. Its low diode capacitance of typically 1 pF makes it an excellent choice for high-frequency applications, including RF systems and fast switching circuits. The RB751S40@115 also boasts a peak forward surge current (IFSM) of 600 mA, providing robust performance during transient conditions.

In terms of reliability, the RB751S40@115 is designed to withstand tough conditions. It operates over a wide temperature range from -65°C to +150°C, ensuring stability and functionality in various environments. The diode also features a low leakage current of typically 0.2 µA at VR = 30 V, contributing to its high reliability and long operational life.

Whether you're designing power management systems, charge and discharge circuits for batteries, voltage clamping applications, or protection circuits, the NXP RB751S40@115 offers the performance and reliability required for your needs. Its combination of low forward voltage, high-frequency operation, and small package size makes it an excellent choice for modern electronic systems.

Key Features:

• Low forward voltage drop
• High-frequency operation
• Low leakage current
• Continuous reverse voltage of 40 V
• Peak forward surge current of 600 mA
• Wide operating temperature range
• Small SOD-523 (SC-79) SMD package