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24N06G

Part No 24N06G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 24A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 24A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 48nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.36W (Ta), 62.5W (Tj)
Maximum Rds On at Id,Vgs 42 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 053190-24N06G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 24N06G CAD Model

Description

Introducing the 24N06G Power MOSFET by ON Semiconductor

The 24N06G is a high-performance, N-channel Power MOSFET designed and manufactured by the renowned ON Semiconductor. This device is engineered to cater to a wide array of power management applications, offering a perfect blend of efficiency, reliability, and thermal performance. Its cutting-edge technology and robust design make it an ideal choice for switching applications where power density and efficiency are critical.

Key Features of the 24N06G

  • Low On-Resistance: The device boasts a very low on-state resistance (R<sub>DS(on)), which significantly reduces conduction losses and enhances overall system efficiency.
  • High Current Capability: With its ability to handle high currents, the 24N06G is suitable for demanding applications, ensuring reliable performance even under strenuous conditions.
  • Fast Switching Performance: The fast switching characteristics of the 24N06G minimize switching losses, making it ideal for high-frequency operations.
  • Robust Thermal Performance: The MOSFET is encapsulated in a package that enhances heat dissipation, ensuring stable operation and longevity even at elevated temperatures.
  • Logic Level Gate Drive: The 24N06G can be driven by logic-level voltages, simplifying the drive circuitry in various applications.

Applications

The versatility of the 24N06G MOSFET allows it to be used in a variety of applications, including but not limited to:

  • Power Supply Units (PSUs)
  • DC-DC Converters
  • Motor Drives
  • Battery Management Systems
  • Automotive Applications
  • Switch Mode Power Supplies (SMPS)

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products that meet the stringent requirements of the electronics industry. The 24N06G is no exception, as it is fabricated with state-of-the-art manufacturing processes and is subjected to rigorous testing protocols to ensure it meets ON Semiconductor's quality standards.

In summary, the 24N06G Power MOSFET from ON Semiconductor represents a superior choice for designers looking for a reliable and efficient solution for their power management needs. Its outstanding electrical characteristics and thermal properties make it a valuable component in achieving optimized system performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $25.1547 $75.4641
6+ $20.6399 $123.8394
9+ $19.9954 $179.9586
12+ $19.3497 $232.1964
16+ $18.7052 $299.2832
21+ $16.7694 $352.1574
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,110 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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