The 2N5190G is a versatile NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This transistor is well-suited for a variety of applications, including amplification and switching functions in industrial, commercial, and consumer electronics. Its robust design ensures reliable operation even in demanding conditions.

Key Features

• High Current Capacity: The 2N5190G can handle continuous collector currents up to 4 A, making it suitable for high-power applications.
• High Voltage Rating: With a collector-emitter voltage (VCEO) of 80 V, it can be used in circuits with relatively high operating voltages.
• Power Dissipation: This transistor has a power dissipation rating of 40 W, ensuring it can manage significant energy without overheating.
• Gain Bandwidth Product (fT): With an fT of 3 MHz, the 2N5190G provides decent frequency response for audio and other signal-processing applications.
• TO-220 Package: Encased in a TO-220 package, it is easy to mount and provides excellent thermal performance.

Applications

The 2N5190G is suitable for a wide range of applications, including:

• Audio amplifiers and high-fidelity audio outputs
• Driver stages in hi-fi amplifiers and television circuits
• Power regulators and power supply circuits
• Switching applications and relay drivers

Reliability and Quality

ON Semiconductor is committed to providing high-quality products. The 2N5190G is designed to meet stringent reliability standards, ensuring a long operational lifespan and consistency in performance. It is also provided in a Pb-free package, making it compliant with RoHS directives for environmental responsibility.

Technical Specifications

The 2N5190G from ON Semiconductor is an excellent choice for designers and engineers looking for a reliable NPN transistor that combines high power handling with a compact form factor and versatile application potential.