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2N5551TFR

Part No 2N5551TFR
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description NPN General-Purpose Amplifier | TRANS NPN 160V 0.6A TO-92
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Cut Tape (CT)
Transistor Type NPN
Current - Collector (Ic) (Maximum) 600mA
Voltage - Collector Emitter Breakdown (Maximum) 160V
Vce Saturation (Maximum) at Ib, Ic 200mV at 5mA, 50mA
Current - Collector Cutoff (Maximum) 50nA (ICBO)
DC Current Gain (hFE) (Minimum) at Ic, Vce 80 at 10mA, 5V
Maximum Power 625mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Family Part Number 2N5551
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1123978-2N5551TFR
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N5551TFR CAD Model

Description

ON Semiconductor 2N5551TFR Bipolar Transistor

The ON Semiconductor 2N5551TFR is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide array of electronic applications. This versatile component is known for its high voltage capabilities and is commonly utilized in amplification and switching functions due to its robust features and reliable performance. The 2N5551TFR is especially suitable for situations that require a high breakdown voltage and fast switching times.

With a collector-emitter voltage (VCEO) of 160V, the 2N5551TFR is well-suited for circuits operating at higher voltages. This makes it an ideal choice for power regulation circuits, audio amplifiers, signal processing, and other applications that demand a high voltage transistor. Additionally, the device can handle a collector current (IC) of up to 600mA, which provides ample current handling capability for a variety of uses.

The 2N5551TFR boasts a transition frequency (fT) of 100MHz, which ensures that it can operate effectively in high-frequency circuits. This high transition frequency is beneficial in applications such as RF amplifiers where rapid switching is crucial. The device also features a low collector-emitter saturation voltage, which contributes to its efficiency by minimizing power loss during operation.

ON Semiconductor has designed the 2N5551TFR with a TO-92 package, which is not only compact but also offers ease of mounting on printed circuit boards (PCBs). This packaging is widely used and recognized in the industry, making the 2N5551TFR a go-to choice for designers and hobbyists alike. Furthermore, the product is provided in a tape and reel format (TFR suffix), which facilitates automated assembly processes, thus streamlining mass production.

The 2N5551TFR is also characterized by its high hFE (DC current gain), which can range from 80 to 300, depending on the operating conditions. This high gain allows for efficient current amplification in electronic circuits. In summary, the 2N5551TFR from ON Semiconductor is a reliable and efficient NPN transistor that offers a combination of high voltage capability, fast switching, and high current gain, making it an excellent choice for a multitude of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
855+ $0.0586 $50.1030
1,825+ $0.0549 $100.1925
2,835+ $0.0530 $150.2550
4,060+ $0.0493 $200.1580
5,265+ $0.0475 $250.0875
6,580+ $0.0456 $300.0480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,000 pieces
MOQ: 855 pcs
Order Increment : 1 pcs
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