The 2SA1370-E is a PNP transistor manufactured by ON Semiconductor, renowned for its high-quality electronic components that are widely used in various applications. This transistor is designed to meet the needs of modern electronic circuits, providing reliable performance and efficiency.

Key Features

• Voltage Ratings: The 2SA1370-E boasts a collector-base voltage (VCBO) of -50V, a collector-emitter voltage (VCEO) of -50V, and an emitter-base voltage (VEBO) of -5V, making it suitable for medium voltage applications.
• Current Capacity: It can handle a continuous collector current (IC) of up to -150mA, which is adequate for a range of signal amplification tasks.
• Power Dissipation: With a power dissipation (PD) of 400mW, this transistor can sustain moderate power levels, suitable for various electronic circuits.
• Gain Bandwidth Product (fT): It has a transition frequency of 120MHz, indicating its capability to operate effectively at high frequencies.
• High DC Current Gain: The 2SA1370-E provides a high DC current gain (hFE) range from 100 to 320, ensuring efficient current amplification.

Applications

The 2SA1370-E is versatile and can be used in a variety of applications, including:

• Audio frequency amplifier stages
• Signal processing circuits
• Driver stages in hi-fi amplifiers and television circuits
• General purpose switching

Package and Quality Assurance

The transistor comes in a TO-92 package, which is a widely accepted standard for through-hole components. This packaging allows for easy integration into PCBs and is suitable for commercial-grade equipment. ON Semiconductor ensures that each 2SA1370-E transistor meets stringent quality control standards, providing reliability and performance that engineers and hobbyists can trust for their electronic projects.