ON Semiconductor 2SB1167T PNP Transistor

The 2SB1167T is a high-performance PNP bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leader in the semiconductor industry. This transistor is designed to meet the needs of a wide range of electronic applications, offering a blend of low power consumption and high-efficiency operation.

With its PNP polarity, the 2SB1167T is suitable for use in various switching and amplification applications. It is capable of controlling high current loads with a low base current, making it an ideal choice for use in power management circuits, audio amplifiers, signal processing, and other general-purpose applications.

Key Features:

• Voltage and Current Ratings: The 2SB1167T can handle collector-emitter voltages up to -50V and collector currents up to -2A, ensuring reliable operation in a range of circuit configurations.
• Low Saturation Voltage: This transistor offers low V<sub>CE(sat) values, which translates to reduced power loss and improved efficiency, particularly in saturation mode applications.
• High Gain Bandwidth Product: With a transition frequency (f<sub>T) typically in the MHz range, the 2SB1167T is suitable for amplification in audio frequency as well as in higher frequency domains.
• Complementary NPN Transistor: ON Semiconductor provides a complementary NPN transistor, which can be paired with the 2SB1167T for push-pull, class B, and other amplifier topologies that require both PNP and NPN devices.

The 2SB1167T comes in a compact package, which makes it an excellent choice for space-constrained applications. Its sturdy construction ensures long-term reliability, which is a hallmark of ON Semiconductor's commitment to high-quality products.

Whether you're designing a new audio amplifier, updating a power supply, or looking for a reliable switch for your circuit, the 2SB1167T transistor from ON Semiconductor offers the performance and reliability needed to make your project a success. With its combination of high power handling, low saturation voltage, and high gain bandwidth product, this transistor is a versatile component suitable for a wide array of electronic designs.