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2SB1201S-TL-E

Part No 2SB1201S-TL-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 50V 2A TP-FA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 700mV @ 50mA, 1A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 100mA, 2V
Maximum Power Dissipation 800mW
Frequency - Transition 150MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 2-TP-FA
Win Source Part Number 097880-2SB1201S-TL-E
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SB1201S-TL-E CAD Model

Description

ON Semiconductor 2SB1201S-TL-E PNP Transistor

The ON Semiconductor 2SB1201S-TL-E is a high-performance PNP bipolar junction transistor (BJT) designed for use in a wide array of electronic applications. This transistor is well-suited for power management functions and is commonly employed in various switching and amplification tasks due to its high current and voltage capabilities.

Constructed with ON Semiconductor's state-of-the-art manufacturing processes, the 2SB1201S-TL-E offers excellent power dissipation and reliability. It is housed in a compact SOT-23 package, which is ideal for space-constrained applications without compromising on performance.

Key Features:

  • PNP Bipolar Junction Transistor: The 2SB1201S-TL-E is a PNP transistor, which means it is designed to pass current predominantly from the emitter to collector when a negative base current is applied.
  • High Current Capability: This component is capable of handling continuous collector currents up to 1 A, making it suitable for driving moderate loads.
  • Voltage Ratings: It has a collector-emitter voltage (VCEO) of -50 V and a collector-base voltage (VCBO) of -60 V, allowing it to withstand significant voltage levels in circuit operations.
  • Power Dissipation: With a power dissipation of 1 W, it can efficiently handle thermal energy in active operation without degradation of its performance.
  • Low Saturation Voltage: The device exhibits a low VCE(sat), which minimizes power loss during the saturation phase when the transistor is fully on.
  • High-Speed Switching: The 2SB1201S-TL-E is designed for high-speed switching applications, offering quick response times for both turn-on and turn-off events.
  • RoHS Compliant: This product is RoHS compliant, ensuring it meets environmental standards by restricting the use of certain hazardous substances in its manufacture.

The 2SB1201S-TL-E transistor from ON Semiconductor is a versatile component that can be implemented in various circuit designs, including but not limited to voltage regulators, power amplifiers, and DC-DC converters. Its small form factor, combined with its robust electrical characteristics, make it a preferred choice for designers looking to optimize their power management solutions with reliability and efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8150 $52.9750
150+ $0.6687 $100.3050
235+ $0.6478 $152.2330
320+ $0.6269 $200.6080
415+ $0.6060 $251.4900
555+ $0.5433 $301.5315
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,105 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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