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2SB1205S-TL-E

Part No 2SB1205S-TL-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 20V 5A TP-FA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 5A
VCEO Maximum Collector-Emitter Breakdown Voltage 20V
Max Vce (sat) 500mV @ 60mA, 3A
Collector Cut-off Current(Max) 500nA (ICBO)
Typical Gain (hFE) (Min) 140 @ 500mA, 2V
Maximum Power Dissipation 1W
Frequency - Transition 320MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 2-TP-FA
Win Source Part Number 118472-2SB1205S-TL-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SB1205S-TL-E CAD Model

Description

The ON Semiconductor 2SB1205S-TL-E is a high-performance PNP bipolar junction transistor (BJT) designed for use in a variety of electronic applications. This reliable semiconductor device is ideal for switching and amplification purposes, offering users robust performance in a compact package. The 2SB1205S-TL-E is well-suited for energy management, power supply, and motor control applications, among others.

Key Features

  • Type: PNP BJT
  • Package: The 2SB1205S-TL-E comes in a small surface-mount package, specifically the TP-FA, which is known for its space-saving design.
  • Collector-Emitter Voltage (Vceo): It can handle a collector-emitter voltage of up to -50V, providing a good margin for various circuit designs.
  • Collector Current (Ic): The device supports a continuous collector current of up to -1A, making it suitable for moderate power applications.
  • Power Dissipation: It has a power dissipation rating of 1W, which is ample for many low to medium power operations.
  • Gain Bandwidth Product (fT): The transistor offers a transition frequency of 120MHz, ensuring good performance in high-frequency signal processing.
  • DC Current Gain (hFE): It boasts a high DC current gain, with a minimum hFE of 120, which means it can amplify a small input current into a much larger output current with ease.

Applications

The 2SB1205S-TL-E is versatile and can be utilized in various electronic circuits. Some of the common applications include:

  • Power management circuits
  • DC/DC converters
  • Battery chargers
  • Motor controllers
  • Signal amplification

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the 2SB1205S-TL-E is no exception. It is manufactured to high standards, ensuring consistent performance and reliability. This transistor is an excellent choice for designers looking for a dependable component that occupies minimal PCB space while providing the necessary electrical characteristics for efficient operation.

With its robust specifications and versatile applications, the ON Semiconductor 2SB1205S-TL-E PNP transistor is an essential component for any electronics project or commercial product requiring reliable switching and amplification.

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3678 $58.8480
385+ $0.3018 $116.1930
595+ $0.2924 $173.9780
820+ $0.2830 $232.0600
1,060+ $0.2735 $289.9100
1,415+ $0.2452 $346.9580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,100 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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