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2SB1205T-E

Part No 2SB1205T-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 20V 5A TP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Transistor Type PNP
Current - Collector (Ic) (Maximum) 5A
Voltage - Collector Emitter Breakdown (Maximum) 20V
Vce Saturation (Maximum) @ Ib, Ic 500mV @ 60mA, 3A
Current - Collector Cutoff (Maximum) 500nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 200 @ 500mA, 2V
Power - Max 1W
Frequency - Transition 320MHz
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Package TO-251-3 Short Leads, IPak, TO-251AA
Manufacturer Package TP
Win Source Part Number 762486-2SB1205T-E
Popularity Medium
Supply and Demand Status Balance
Family Name 2SB1205T
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian 2SB1205T-E CAD Model

Description

ON Semiconductor 2SB1205T-E PNP Transistor

The ON Semiconductor 2SB1205T-E is a high-performance PNP bipolar junction transistor (BJT) designed for use in a variety of electronic applications. This device is part of ON Semiconductor's extensive transistor portfolio, which is known for its reliability and efficiency. The 2SB1205T-E is particularly suitable for switching and amplification purposes, providing designers with a versatile component that can be used in both digital and analog circuits.

The 2SB1205T-E transistor offers a collector-emitter voltage (VCEO) of -50V and a collector current (IC) of up to -2A, which makes it an excellent choice for medium-power applications. Its high current capacity coupled with the PNP configuration allows for efficient sinking of current, a feature that is often required in power management circuits.

One of the key features of the 2SB1205T-E is its low saturation voltage, which enhances its performance in saturation mode and reduces power loss. This characteristic is particularly beneficial in applications where energy efficiency is a priority, such as battery-operated devices. Moreover, the device boasts a fast switching speed, which is essential for applications that require high-speed signal processing.

The 2SB1205T-E is packaged in a TO-252 (DPAK) package, which is known for its compact footprint and excellent thermal performance. This package is designed to be mounted on a printed circuit board (PCB) with ease, making it a convenient choice for high-density electronic designs. The robust construction of the TO-252 package ensures that the transistor can withstand harsh operating conditions, further enhancing its reliability.

Applications for the 2SB1205T-E include power supplies, motor controllers, audio amplifiers, and other general-purpose amplification and switching circuits. Its performance characteristics make it a suitable replacement for less efficient transistors in existing designs or a reliable component in new projects.

Overall, the ON Semiconductor 2SB1205T-E PNP transistor is a high-quality electronic component that offers a balance of power handling, efficiency, and speed, making it an excellent choice for a wide range of applications.

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