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2SB1215T-E

Part No 2SB1215T-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 100V 3A TP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Transistor Type PNP
Current - Collector (Ic) (Maximum) 3A
Voltage - Collector Emitter Breakdown (Maximum) 100V
Vce Saturation (Maximum) @ Ib, Ic 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Maximum) 1μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 200 @ 500mA, 5V
Power - Max 1W
Frequency - Transition 130MHz
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Package TO-251-3 Short Leads, IPak, TO-251AA
Manufacturer Package TP
Win Source Part Number 762487-2SB1215T-E
Popularity Medium
Supply and Demand Status Balance
Family Name 2SB1215T
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian 2SB1215T-E CAD Model

Description

The 2SB1215T-E from ON Semiconductor is a high-performance PNP bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This transistor is known for its excellent amplification capabilities and is suitable for use in power management functions, including various switching applications, driver stages in amplifiers, and signal processing.

Key Features:

  • High Current Capacity: The 2SB1215T-E can handle a continuous collector current (Ic) of up to 1.5A, making it suitable for medium power applications.
  • Low Saturation Voltage: It features a low collector-emitter saturation voltage (Vce(sat)), which ensures efficient operation and helps to minimize power loss.
  • Fast Switching Speed: This transistor has a fast switching response, which is crucial for high-speed amplification and switching tasks.
  • Complementary NPN Transistor Available: For applications requiring a complementary NPN transistor, ON Semiconductor provides an equivalent component to make design and implementation easier.

Applications:

  • Power supply circuits
  • Audio amplifiers
  • Signal processing
  • Motor control circuits
  • Switching regulators

Specifications:

Parameter Value
Collector-Base Voltage (VCBO) -50V
Collector-Emitter Voltage (VCEO) -50V
Emitter-Base Voltage (VEBO) -5V
Collector Current (IC) -1.5A
Power Dissipation (PD) 10W

The 2SB1215T-E transistor is housed in a TO-220B package, which offers a balance between thermal performance and size, making it suitable for PCB mounting. ON Semiconductor's commitment to quality ensures that this component meets the stringent requirements of the electronic industry, making it a reliable choice for your circuit designs.

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