The 2SC2621E-RA from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This transistor is well-suited for audio frequency amplifier applications due to its excellent linearity and high gain characteristics. It is also commonly used in switch mode power supplies, drivers for relays, and other general-purpose switching applications.

Key Features

• High Current Gain Bandwidth Product: The 2SC2621E-RA offers a high fT (transition frequency), making it suitable for applications requiring fast switching and amplification of high-frequency signals.
• Low Saturation Voltage: This transistor has a low collector-emitter saturation voltage, which helps in reducing power loss and improving efficiency in switching applications.
• High Power Dissipation: With the ability to dissipate a significant amount of power, the 2SC2621E-RA can handle higher currents and operate at higher temperatures without performance degradation.
• Complementary PNP Type: ON Semiconductor provides a complementary PNP type transistor, making it easy to design push-pull amplifier stages or complementary switching circuits.

Applications

• Audio Amplifiers
• Power Management Circuits
• Driver Stages in Hi-Fi Amplifiers
• Switch Mode Power Supplies (SMPS)
• Relay Drivers
• General Purpose Switching

Technical Specifications

• Collector-Emitter Voltage (VCEO): 120V
• Collector Current (IC): 1A
• Collector Power Dissipation (Pc): 900mW
• DC Current Gain (hFE): 70 - 700
• Transition Frequency (fT): 100MHz (minimum)
• Operating and Storage Junction Temperature Range: -55°C to +150°C

The 2SC2621E-RA is available in a TO-92 package, which is widely used and known for its ease of integration into various circuit designs. With its robust performance and versatile application range, this transistor from ON Semiconductor is an excellent choice for designers seeking reliability and efficiency in their electronic projects.