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Same model may have multiple batches, images only for reference.
IXFK32N50Q Real Image
Same model may have multiple batches, images only for reference.

IXFK32N50Q

Part No IXFK32N50Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 32A TO-264 / Trans MOSFET N-CH 500V 32A 3-Pin(3+Tab) TO-264AA
Datasheet
IXFK32N50Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 4mA
Gate Charge (Qg) (Maximum) @ Vgs 150nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3950pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 416W (Tc)
Rds On (Maximum) @ Id, Vgs 160 mOhm @ 16A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-264AA (IXFK)
Package TO-264-3, TO-264AA
Win Source Part Number 777619-IXFK32N50Q
Popularity Medium
Supply and Demand Status Limited
Family Name IXFK32N50Q
Introduction Date February 07, 2004
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IXFK32N50Q CAD Model

Description

The IXFK32N50Q is a high-performance MOSFET transistor, manufactured by IXYS.

  • Series: HiPerFET
  • Package: TO-264-3, TO-264AA
  • Continuous Drain Current @ 25°C: 32A
  • Power Dissipation @ Tc: 416W
  • Drain-Source Voltage: 500V
  • Gate-Source Voltage: ±20V
  • Rds on @ 16A and 10V: 160 mOhm
  • Gate Charge @ 10V: 150nC

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