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2SC2812RL5-TB

Part No 2SC2812RL5-TB
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer ON Semiconductor
Win Source Part Number 155499-2SC2812RL5-TB
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC2812RL5-TB CAD Model

Description

The 2SC2812RL5-TB transistor is a high-performance device manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This product is designed to meet the needs of a wide range of electronic applications, offering reliable performance and efficiency.

Key Features

  • NPN Silicon Epitaxial Transistor: This component is an NPN transistor, which means it's designed to support the flow of electrons across the device, making it ideal for amplification and switching applications.
  • High Current Capability: The 2SC2812RL5-TB is capable of handling high current levels, making it suitable for power regulation and other applications that require robust current management.
  • Low Saturation Voltage: It features a low saturation voltage, which helps in reducing power loss and improving efficiency, particularly in low-voltage operations.
  • High-Speed Switching: The device is optimized for high-speed switching applications, which is essential for modern digital circuits and high-frequency operations.
  • Mini Mold Package: Encased in a compact mini mold package, the 2SC2812RL5-TB is designed for space-saving installations, making it ideal for use in portable electronics and other applications where space is at a premium.

Applications

The versatile 2SC2812RL5-TB transistor is suitable for a variety of applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Motor Control Systems
  • Audio Amplifiers
  • Signal Processing
  • Switching Regulators
  • Consumer Electronics

Product Specifications

ON Semiconductor's 2SC2812RL5-TB offers the following specifications:

  • Collector-Emitter Voltage: V<sub>CEO
  • Collector Current: I<sub>C
  • Power Dissipation: P<sub>D
  • Operating Junction Temperature Range: T<sub>j
  • Transition Frequency: f<sub>T

For detailed specifications and operational parameters, customers should consult the official datasheet provided by ON Semiconductor.

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