The 2SC3134H6-TB is a high-performance bipolar junction transistor (BJT) from ON Semiconductor, a leading provider of semiconductor-based solutions. This NPN transistor is designed to deliver efficient current amplification and switching, making it an ideal choice for a variety of electronic applications.

Key Features

• High Current Gain: The transistor provides a high current gain (hFE), which ensures a robust amplification of the input signal.
• Low Saturation Voltage: It comes with a low collector-emitter saturation voltage, which reduces power loss and improves efficiency in operation.
• High-Speed Switching: The 2SC3134H6-TB is designed for high-speed switching applications, contributing to faster response times in circuits.
• Thermal Stability: The device is characterized by its excellent thermal stability, which allows it to maintain performance over a wide temperature range.

Applications

This transistor is suitable for a wide range of applications, including but not limited to:

• Power management circuits
• Audio amplifiers
• Signal processing
• Switching regulators
• Driver stages in high-fidelity amplifiers and television circuits

Product Specifications

Parameter Value Transistor Polarity NPN Collector-Emitter Voltage (VCEO) Specified value Collector-Base Voltage (VCBO) Specified value Emitter-Base Voltage (VEBO) Specified value Collector Current (IC) Specified value Power Dissipation (PD) Specified value Operating Junction Temperature (Tj) Specified range Package Type Specified package

For precise values and detailed specifications, please refer to the official datasheet provided by ON Semiconductor.

Quality and Reliability

ON Semiconductor is committed to delivering high-quality and reliable components. The 2SC3134H6-TB transistor is manufactured with the company's stringent quality control processes, ensuring performance and longevity for your electronic projects.