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2N7000

Part No 2N7000
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 0.2A TO-92
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging AMMO PACKAGE
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Input Capacitance 50pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 400mW (Ta)
Maximum Rds On at Id,Vgs 5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Dimension TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Win Source Part Number 108379-2N7000
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Motor Drive & Control, Power Management
Quantity per package 10k pcs
Ultra Librarian 3D Model Ultra Librarian 2N7000 CAD Model

Description

Overview

The 2N7000 is a versatile N-channel MOSFET transistor, ideal for a variety of switching applications. Its compact design supports efficient operation in both small- and medium-sized projects.

Applications

  • Automotive electronics
  • Signal switching
  • Amplifiers
  • Relay drivers

Features and Benefits

  • Low on-state resistance for efficient performance
  • Fast switching speed
  • Enhancement-mode MOSFET
  • Compact form factor

This transistor is perfect for designers looking to innovate in space-constrained environments without compromising on performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2250 $50.6250
545+ $0.1846 $100.6070
840+ $0.1788 $150.1920
1,160+ $0.1731 $200.7960
1,495+ $0.1673 $250.1135
2,000+ $0.1500 $300.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 151,429 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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Shipping Information

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