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2SC3152M

Part No 2SC3152M
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Trans GP BJT NPN 800V 3A 3-Pin (3+Tab) TO-3PB
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer ON Semiconductor
Win Source Part Number 155667-2SC3152M
Popularity Low
Supply and Demand Status Limited
Family Name 2SC3152
Introduction Date May 19, 2004
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SC3152M CAD Model

Description

The 2SC3152M is a high-performance NPN bipolar transistor from ON Semiconductor, designed for use in a wide range of electronic applications. This versatile component is well-suited for switching and amplification tasks, thanks to its excellent gain characteristics and high current capacity.

Key Features

  • High Current Capacity: The 2SC3152M is capable of handling significant current, making it suitable for power switching applications.
  • High Voltage Tolerance: With its ability to withstand high voltages, this transistor is ideal for use in circuits that are exposed to large voltage swings.
  • Fast Switching Speed: The device provides rapid transition between on and off states, which is crucial for high-speed switching operations.
  • Low Saturation Voltage: The low V<sub>CE(sat) of the transistor ensures efficient operation with minimal power loss during saturation.
  • Excellent Gain Linearity: The linear gain characteristic of the 2SC3152M ensures consistent performance over a wide range of operating conditions.

Applications

The 2SC3152M is suitable for a variety of applications, including but not limited to:

  • Power management systems
  • DC-DC converters
  • Motor control circuits
  • Audio amplifiers
  • Signal processing

Quality and Reliability

ON Semiconductor is known for its commitment to quality and the 2SC3152M is no exception. Built to high standards, this transistor offers reliable performance even under challenging conditions. It is designed to meet rigorous industry standards for durability and longevity, ensuring that it can be integrated into products with confidence.

Technical Specifications

Parameter Value Collector-Emitter Voltage (V<sub>CEO) 50V Collector Current (I<sub>C) 150mA Power Dissipation (P<sub>D) 1W Transition Frequency (f<sub>T) 250MHz Operating Junction Temperature (T<sub>j) -55°C to +150°C

For detailed specifications and application notes, customers are encouraged to consult the 2SC3152M datasheet available on the ON Semiconductor website.

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