The 2SC3859-TA is a high-performance NPN power transistor manufactured by ON Semiconductor, a leader in the semiconductor industry. This device is designed for use in high-power audio amplifiers, series regulators, and power switching circuits, making it an ideal choice for a wide range of electronic applications that require robust and reliable power management solutions.
Key Features
- High Power Dissipation: The 2SC3859-TA is capable of dissipating high amounts of power, enabling it to handle significant thermal stresses during operation.
- High Current Capability: With the ability to support high current flow, this transistor is suitable for applications that demand substantial power output.
- Excellent Gain Characteristics: The device offers excellent gain linearity, which is essential for maintaining signal fidelity in audio amplification.
- Robust Construction: The transistor is built with ON Semiconductor's proven technologies, ensuring high reliability and performance consistency.
Applications
- Audio Power Amplifiers
- Series Regulators
- Power Switching Circuits
- General Purpose Power Amplification
Specifications
Parameter
Value
Collector-Emitter Voltage (Vceo)
200V
Collector Current (Ic)
17A
Power Dissipation (Pd)
150W
Transition Frequency (fT)
30MHz
Operating and Storage Junction Temperature Range
-55°C to +150°C
The 2SC3859-TA transistor is a testament to ON Semiconductor's commitment to providing high-quality components that meet the demanding needs of modern electronic systems. Whether for professional audio equipment or high-performance power management systems, the 2SC3859-TA delivers the efficiency and reliability required by today's most challenging applications.