ON Semiconductor 2SC4615D-E NPN Bipolar Transistor

The ON Semiconductor 2SC4615D-E is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile transistor is well-suited for amplification and switching applications, offering a balance of good amplification factor, fast switching speeds, and low saturation voltage, making it an excellent choice for designers looking for efficiency and reliability.

Key Features

• Low V<sub>CE(sat): The 2SC4615D-E boasts a low collector-emitter saturation voltage, which enhances its efficiency in switching applications and reduces power losses.
• High Current Gain: With a high current gain (h<sub>FE), this transistor can amplify weak input signals to a significant level, making it ideal for signal processing tasks.
• Fast Switching Speed: The device is designed for rapid switching, which is critical for high-speed circuit operation and for applications where response time is a key consideration.
• High Reliability: ON Semiconductor's commitment to quality ensures that the 2SC4615D-E transistor offers stable performance and a long operational life.

Applications

The 2SC4615D-E is suitable for a diverse range of applications, including:

• Audio Amplifiers
• Signal Processing
• Power Management Circuits
• Switching Regulators
• DC-DC Converters
• Motor Control Circuits

Product Specifications

The 2SC4615D-E has the following specifications:

• Collector-Emitter Voltage (V<sub>CEO): 50V
• Collector Current (I<sub>C): 500mA
• Power Dissipation (P<sub>D): 625mW
• Collector-Emitter Saturation Voltage (V<sub>CE(sat)): 0.3V (I<sub>C=100mA, I<sub>B=10mA)
• DC Current Gain (h<sub>FE): 270 (I<sub>C=100mA, V<sub>CE=6V)

With its robust specifications and ON Semiconductor's proven track record for quality, the 2SC4615D-E is an excellent choice for designers and engineers looking to incorporate a reliable NPN transistor into their electronic designs.