The 2SC4695-TB-E is a high-performance NPN bipolar junction transistor (BJT) developed by ON Semiconductor, a leader in energy-efficient innovations. This semiconductor device is designed to meet the needs of a wide range of electronic applications, offering reliability and efficiency in a compact package.
Key Features:
- High Current Gain Bandwidth Product: The 2SC4695-TB-E provides a high fT, making it suitable for applications requiring fast switching and high-frequency operation.
- Low Saturation Voltage: This transistor is engineered to have a low VCE(sat), which translates to reduced power loss and improved efficiency during operation.
- Complementary PNP Type Available: The 2SC4695-TB-E has a complementary PNP type, allowing for flexibility in designing push-pull configurations and other complementary circuits.
- Surface Mount Package: Housed in a TB package, this device is suitable for surface mount technology (SMT), making it ideal for compact and high-density PCB designs.
Applications:
The 2SC4695-TB-E is versatile and can be used in various applications, including:
- Audio amplifiers
- Switching regulators
- DC-DC converters
- Power management circuits
- Signal processing
Product Specifications:
| Parameter |
Value |
| Collector-Emitter Voltage (VCEO) |
120 V |
| Collector Current (IC) |
1 A |
| Power Dissipation (PD) |
1 W |
| Operating Temperature Range (Tj) |
-55°C to +150°C |
With its robust design and superior electrical characteristics, the 2SC4695-TB-E from ON Semiconductor is a reliable choice for designers looking to optimize the performance and efficiency of their electronic systems.