ON Semiconductor 2SC6096-TD-E NPN Transistor

The ON Semiconductor 2SC6096-TD-E is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile component offers excellent amplification and switching characteristics, making it suitable for both analog and digital circuits.

Key Features

• High Current Capacity: The 2SC6096-TD-E is capable of handling a collector current (Ic) of up to 1A, which makes it suitable for medium power applications.
• High Voltage Tolerance: With a collector-emitter voltage (Vceo) of 50V, it can be used in circuits that require a moderate voltage level.
• Low Saturation Voltage: This transistor has a low collector-emitter saturation voltage, which enhances its efficiency by minimizing power loss during operation.
• Fast Switching Speed: The fast switching response of the 2SC6096-TD-E is ideal for applications that require quick transitions between on and off states.
• Compact SOT-89 Package: The small surface-mount package allows for a compact design footprint, making it well-suited for space-constrained applications.

Applications

The 2SC6096-TD-E is widely used in various electronic circuits, including:

• Power management modules
• DC-DC converters
• Motor control circuits
• Audio amplifiers
• Signal amplification
• Switching regulators
• Driver stages in high-fidelity amplifiers and sound systems

Product Specifications

Parameter Value Collector-Base Voltage (Vcbo) 60V Collector-Emitter Voltage (Vceo) 50V Emitter-Base Voltage (Vebo) 5V Collector Current (Ic) 1A Collector-Emitter Saturation Voltage Typically below 0.5V Transition Frequency (fT) 180MHz Package SOT-89

With its robust performance and versatile application range, the ON Semiconductor 2SC6096-TD-E NPN transistor is a reliable choice for designers looking to enhance their electronic designs.