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2SD1048-7-TB-E

Part No 2SD1048-7-TB-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 15V 0.7A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 700mA
VCEO Maximum Collector-Emitter Breakdown Voltage 15V
Max Vce (sat) 80mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 50mA, 2V
Maximum Power Dissipation 200mW
Frequency - Transition 250MHz
Temperature Range - Operating 125°C (TJ)
Mounting SMD (SMT)
Case / Package 3-CP
Win Source Part Number 005936-2SD1048-7-TB-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SD1048-7-TB-E CAD Model

Description

The 2SD1048-7-TB-E, manufactured by ON Semiconductor, is a high-performance NPN bipolar junction transistor (BJT) designed to meet a wide range of applications. This device is particularly well-suited for audio frequency amplifier applications due to its excellent linearity and high gain characteristics.

Key Features

  • High Current Capability: The 2SD1048-7-TB-E can handle continuous collector currents up to 1.5 A, making it suitable for medium power applications.
  • Low Saturation Voltage: With a low collector-emitter saturation voltage, this transistor ensures high efficiency and minimizes power losses in switching applications.
  • High Power Dissipation: It has a power dissipation rating of 10 W, which allows it to handle significant power levels without overheating.
  • Complementary PNP Type: The complementary PNP type transistor is available for push-pull amplifier configurations, allowing for design flexibility.
  • Robust Package: Enclosed in a TO-220B package, the 2SD1048-7-TB-E is designed for improved thermal performance and durability.

Applications

  • Audio frequency amplifier stages
  • Driver stages in Hi-Fi amplifiers and television circuits
  • General-purpose switching and amplification

Specifications

Parameter Value
Collector-Base Voltage (VCBO) 60 V
Collector-Emitter Voltage (VCEO) 50 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1.5 A
Power Dissipation (PD) 10 W
DC Current Gain (hFE) 70 - 700

With its robust design and ability to drive medium power loads, the 2SD1048-7-TB-E from ON Semiconductor is an excellent choice for designers looking to implement reliable and efficient solutions in their electronic circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3172 $58.6820
445+ $0.2603 $115.8335
690+ $0.2522 $174.0180
950+ $0.2441 $231.8950
1,225+ $0.2359 $288.9775
1,640+ $0.2115 $346.8600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,380 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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