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2SD1153-AE

Part No 2SD1153-AE
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description NPN DARLINGTON TRANSISTOR / Bipolar (BJT) Transistor
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Active
Standard Package 833 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 855265-2SD1153-AE
Ultra Librarian 3D Model Ultra Librarian 2SD1153-AE CAD Model

Description

The 2SD1153-AE is a high-performance bipolar junction transistor (BJT) from ON Semiconductor, a leading figure in the semiconductor industry. This NPN transistor is designed to meet the needs of a wide range of electronic applications, offering reliability, efficiency, and high-speed switching capabilities.

Key Features

  • High Current Capacity: With the ability to handle significant current levels, the 2SD1153-AE is ideal for power amplification and switching applications that require robust current management.
  • Low Saturation Voltage: The device exhibits low V<sub>CE(sat), which means reduced power loss during operation, leading to higher efficiency in your circuit designs.
  • Fast Switching Speed: The 2SD1153-AE is characterized by its quick response time, making it suitable for high-frequency operations and applications where speed is critical.
  • High Reliability: Manufactured by ON Semiconductor, this transistor is built to last and perform consistently under varying conditions, ensuring a long operational lifespan.
  • Complementary PNP Type Available: For applications requiring a complementary PNP transistor, ON Semiconductor offers a matching part, providing designers with flexibility in their circuit configurations.

Applications

The versatility of the 2SD1153-AE allows it to be used in a diverse array of electronic circuits. Common applications include:

  • Power regulators
  • DC-DC converters
  • Motor controllers
  • Audio amplifiers
  • Switching circuits

Technical Specifications

The 2SD1153-AE comes with the following technical specifications:

  • Collector-Emitter Voltage (V<sub>CEO): Specified at a certain level to withstand voltage without breakdown.
  • Collector Current (I<sub>C): Indicates the maximum continuous current the transistor can handle.
  • Power Dissipation (P<sub>D): Defines the amount of power the device can dissipate without exceeding its maximum operating temperature.
  • Operating Temperature Range: Specifies the range within which the transistor can operate reliably.

For detailed specifications, please refer to the official ON Semiconductor datasheet for the 2SD1153-AE.

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