ON Semiconductor 2SD1207S-AE NPN Bipolar Transistor
The ON Semiconductor 2SD1207S-AE is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This transistor is well-suited for switching and amplification purposes due to its fast switching speeds and high current capacity.
Key Features
- High Current Capability: The 2SD1207S-AE can handle continuous collector currents up to 1A, making it suitable for high-power applications.
- Low Saturation Voltage: This transistor offers low collector-emitter saturation voltage, which enhances overall efficiency by minimizing power loss during operation.
- High-Speed Switching: Designed for rapid switching, this component is ideal for applications that require quick transitions between on and off states.
- Complementary PNP Type Available: For applications requiring a complementary PNP transistor, ON Semiconductor offers a matching part that can be used in push-pull configurations and other complementary circuits.
Applications
The 2SD1207S-AE is versatile and can be employed in various applications, including:
- Power regulators
- DC-DC converters
- Motor controls
- Audio amplifiers
- Switching circuits
Specifications
| Parameter |
Value |
| Collector-Emitter Voltage (VCEO) |
50 V |
| Collector Current (IC) |
1 A |
| Power Dissipation (PD) |
900 mW |
| Transition Frequency (fT) |
100 MHz |
| Operating and Storage Junction Temperature Range |
-55°C to +150°C |
With its robust design and reliable performance, the ON Semiconductor 2SD1207S-AE is a great choice for designers and engineers looking for a dependable transistor for their electronic projects.