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2SD1207S-AE

Part No 2SD1207S-AE
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 50V 2A 3MP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 400mV @ 50mA, 1A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 100mA, 2V
Maximum Power Dissipation 1W
Frequency - Transition 150MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package 3-MP
Win Source Part Number 1004520-2SD1207S-AE
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SD1207S-AE CAD Model

Description

ON Semiconductor 2SD1207S-AE NPN Bipolar Transistor

The ON Semiconductor 2SD1207S-AE is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This transistor is well-suited for switching and amplification purposes due to its fast switching speeds and high current capacity.

Key Features

  • High Current Capability: The 2SD1207S-AE can handle continuous collector currents up to 1A, making it suitable for high-power applications.
  • Low Saturation Voltage: This transistor offers low collector-emitter saturation voltage, which enhances overall efficiency by minimizing power loss during operation.
  • High-Speed Switching: Designed for rapid switching, this component is ideal for applications that require quick transitions between on and off states.
  • Complementary PNP Type Available: For applications requiring a complementary PNP transistor, ON Semiconductor offers a matching part that can be used in push-pull configurations and other complementary circuits.

Applications

The 2SD1207S-AE is versatile and can be employed in various applications, including:

  • Power regulators
  • DC-DC converters
  • Motor controls
  • Audio amplifiers
  • Switching circuits

Specifications

Parameter Value
Collector-Emitter Voltage (VCEO) 50 V
Collector Current (IC) 1 A
Power Dissipation (PD) 900 mW
Transition Frequency (fT) 100 MHz
Operating and Storage Junction Temperature Range -55°C to +150°C

With its robust design and reliable performance, the ON Semiconductor 2SD1207S-AE is a great choice for designers and engineers looking for a dependable transistor for their electronic projects.

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