The ON Semiconductor 2SD1935-TB is a high-performance bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This NPN transistor is well-suited for power amplification and switching applications, thanks to its robust construction and high current handling capabilities.

Key Features

• Voltage and Current Ratings: The 2SD1935-TB offers a collector-base voltage (VCBO) of 60 V, a collector-emitter voltage (VCEO) of 50 V, and a collector current (IC) of up to 3 A, making it suitable for moderate voltage and power applications.
• High Power Dissipation: With a power dissipation (PD) of 25 W, this transistor can handle significant thermal energy, making it ideal for demanding circuits.
• High Gain Bandwidth Product: The device features a high transition frequency (fT) of 80 MHz, which allows for efficient signal amplification in high-frequency applications.
• Low Saturation Voltage: The low collector-emitter saturation voltage (VCE(sat)) helps to reduce power loss and improve efficiency in switching applications.
• Complementary PNP Type: The 2SD1935-TB has a complementary PNP type transistor available for push-pull configurations, enabling more versatile circuit designs.

Applications

The 2SD1935-TB is suitable for a variety of electronic applications, including:

• Audio power amplifiers
• DC-DC converters
• Power management circuits
• Motor control circuits
• General-purpose switching

Package and Quality

Encased in a TO-220B package, the 2SD1935-TB offers a compact form factor with excellent thermal properties. ON Semiconductor is committed to high-quality standards, and the 2SD1935-TB conforms to their rigorous reliability and performance criteria, ensuring a dependable solution for your circuit requirements.