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2SD2198S-DL-E

Part No 2SD2198S-DL-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description BIP NPN 5A 50V / Bipolar (BJT) Transistor
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Active
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 16330-2SD2198S-DL-E
Ultra Librarian 3D Model Ultra Librarian 2SD2198S-DL-E CAD Model

Description

ON Semiconductor 2SD2198S-DL-E Product Overview

The 2SD2198S-DL-E from ON Semiconductor is a robust NPN bipolar junction transistor (BJT) designed to deliver high-speed switching performance in a compact package. This transistor is an ideal choice for various applications that require reliable and efficient current control, including power management, amplification, and switching circuits.

Key Features

  • High Current Capacity: The 2SD2198S-DL-E is capable of handling continuous collector currents up to 2A, making it suitable for driving moderate to high current loads.
  • Low Saturation Voltage: With a low collector-emitter saturation voltage (V<sub>CE(sat)), this transistor ensures efficient operation with minimal power loss, enhancing overall system efficiency.
  • High-Speed Switching: Engineered for rapid switching, the 2SD2198S-DL-E can operate at high frequencies, which is essential for applications like switch-mode power supplies and high-speed signal processing.
  • Compact SMD Package: The device comes in a small SOT-89 surface-mount package, which saves valuable board space and is suitable for automated assembly processes.

Electrical Characteristics

  • Collector-Emitter Voltage (V<sub>CEO): It has a maximum collector-emitter voltage of 30V, providing a good margin for various electronic circuits.
  • Collector-Base Voltage (V<sub>CBO): The maximum collector-base voltage is rated at 60V, allowing for a wide range of applications.
  • Emitter-Base Voltage (V<sub>EBO): The device can tolerate up to 7V across the emitter-base junction.
  • Collector Dissipation (P<sub>C): It has a power dissipation capability of 1W, ensuring it can handle significant power levels without overheating.

Applications

The versatility of the 2SD2198S-DL-E transistor makes it an excellent choice for a broad spectrum of applications. It is particularly well-suited for:

  • Power supply circuits
  • DC-DC converters
  • Motor control drivers
  • Audio amplifiers
  • Signal amplification and processing
  • Switching regulators

With its combination of high-speed switching, low saturation voltage, and high current handling, the 2SD2198S-DL-E from ON Semiconductor is a reliable and efficient component for designers looking to optimize their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.6295 $63.7770
14+ $8.7214 $122.0996
21+ $8.4488 $177.4248
29+ $8.1762 $237.1098
37+ $7.9037 $292.4369
49+ $7.0859 $347.2091
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Availability: 9,100 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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