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2SJ316-TD-E

Part No 2SJ316-TD-E
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description PCH 4V DRIVE SERIES / RF Mosfet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Obsolete
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 855341-2SJ316-TD-E
Ultra Librarian 3D Model Ultra Librarian 2SJ316-TD-E CAD Model

Description

Introducing the 2SJ316-TD-E P-Channel MOSFET by ON Semiconductor

The 2SJ316-TD-E is a high-performance P-Channel MOSFET engineered by ON Semiconductor, a leader in energy-efficient innovations. This robust semiconductor device is designed to meet the rigorous demands of power management applications across a variety of sectors, including consumer electronics, automotive, and industrial systems.

Key Features of the 2SJ316-TD-E

  • Low On-Resistance: The device boasts an extremely low on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing conduction losses.
  • High-Speed Switching: With its fast switching capabilities, the 2SJ316-TD-E is ideal for applications that require quick response times, ensuring efficient operation and energy savings.
  • Gate Charge Optimization: The MOSFET comes with an optimized gate charge that allows for reduced switching losses, making it suitable for high-frequency power switching applications.
  • Enhanced Durability: Constructed to withstand tough conditions, this MOSFET is capable of operating over a wide temperature range, ensuring reliability and a long operational lifespan.

Technical Specifications

  • Drain-Source Voltage (V<sub>DS): The 2SJ316-TD-E can handle a maximum drain-source voltage of -60V, providing a wide operating range for various applications.
  • Continuous Drain Current (I<sub>D): It supports a continuous drain current of -40A, allowing it to manage high current loads with ease.
  • Power Dissipation (P<sub>D): With a power dissipation of 40W, this MOSFET can sustain significant energy throughput without overheating.
  • Package: Housed in a TO-252 (DPAK) package, the 2SJ316-TD-E offers a compact footprint that is suitable for space-constrained applications.

Applications

The versatility of the 2SJ316-TD-E P-Channel MOSFET makes it an excellent choice for a wide range of applications, including:

  • DC/DC converters
  • Power supply circuits
  • Motor drives
  • Battery management systems
  • Load switches

ON Semiconductor's commitment to quality and performance is evident in the 2SJ316-TD-E. This P-Channel MOSFET is a testament to the company's dedication to providing components that enhance system efficiency and reliability, making it an essential part of any power management solution.

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