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2SJ659-DL-E

Part No 2SJ659-DL-E
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description PCH 4V DRIVE SERIES / RF Mosfet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Active
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 743772-2SJ659-DL-E
Ultra Librarian 3D Model Ultra Librarian 2SJ659-DL-E CAD Model

Description

Product Overview: 2SJ659-DL-E by ON Semiconductor

The 2SJ659-DL-E is a high-performance P-channel MOSFET brought to you by ON Semiconductor, a leading force in the innovation and manufacture of energy-efficient electronics. This product is designed to cater to a variety of applications, including power management and switching applications, which require high-speed operation and energy efficiency.

With its low on-state resistance and high-speed switching capabilities, the 2SJ659-DL-E is an ideal choice for engineers and designers looking to optimize power efficiency in their designs. The MOSFET's robust structure also ensures reliable operation over a wide range of temperatures, making it suitable for challenging environments.

Key Features

  • Low On-Resistance: The device boasts a very low R<sub>DS(on), minimizing conduction losses and improving overall efficiency.
  • High-Speed Switching: Designed for fast switching applications, it enables high-frequency operation while maintaining low switching losses.
  • High Reliability: Manufactured with ON Semiconductor's quality processes, the 2SJ659-DL-E is built for long-term reliability and stable performance.
  • Environmentally Friendly: The product is compliant with RoHS standards, ensuring that it adheres to environmental regulations by avoiding the use of hazardous substances.

Applications

The versatility of the 2SJ659-DL-E allows it to be integrated into a wide range of applications, particularly those that demand high efficiency and reliability. Some of these applications include:

  • DC/DC converters
  • Power supply units
  • Motor drives
  • Battery management systems
  • Load switches

Technical Specifications

The 2SJ659-DL-E operates at a drain-source voltage (V<sub>DSS) of -60V, with a continuous drain current (I<sub>D) of -20A, ensuring it can handle significant power levels. The device also features a low threshold voltage, enabling operation at lower gate voltages and thus broadening its compatibility with various drive circuits.

In conclusion, the 2SJ659-DL-E from ON Semiconductor is a robust and efficient solution for designers seeking a P-channel MOSFET that delivers both performance and reliability. Its compliance with environmental standards further makes it a responsible choice for modern electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9380 $60.9700
155+ $0.7697 $119.3035
235+ $0.7457 $175.2395
325+ $0.7216 $234.5200
415+ $0.6975 $289.4625
555+ $0.6253 $347.0415
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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