ON Semiconductor 2SJ670-TD-E - High-Performance P-Channel MOSFET

The 2SJ670-TD-E is a cutting-edge P-channel MOSFET brought to you by ON Semiconductor, a company renowned for its innovative and reliable semiconductor solutions. This particular MOSFET is designed to cater to a wide array of applications, offering high-speed switching, low on-resistance, and a compact form factor.

Key Features

• Low On-Resistance: The device features an exceptionally low on-resistance, resulting in reduced power loss and improved energy efficiency, making it ideal for power management applications.
• High-Speed Switching: With its fast switching capabilities, the 2SJ670-TD-E is perfect for high-frequency applications, ensuring minimal delays and maximum performance.
• Low Drive Voltage: It operates at a low drive voltage, which enables it to be used in circuits with lower gate drive power requirements.
• Compact Package: Encased in a small and flat lead SOT-428 package, this MOSFET is suitable for space-constrained applications without compromising on power or performance.

Applications

The 2SJ670-TD-E MOSFET is versatile and can be used in various applications, including:

• Power Supply Circuits
• DC/DC Converters
• Motor Drives
• Load Switching
• Battery Management Systems

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) -60 V Continuous Drain Current (I<sub>D) -6 A Power Dissipation (P<sub>D) 1 W Gate-Source Voltage (V<sub>GS) ±20 V Total Gate Charge (Q<sub>g) 10 nC

With its robust construction and adherence to ON Semiconductor's stringent quality standards, the 2SJ670-TD-E MOSFET is a reliable component for any high-performance electronic system. It is a testament to ON Semiconductor's commitment to providing state-of-the-art solutions for the ever-evolving needs of the electronics industry.