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2SK1646Y-05-TR-E

Part No 2SK1646Y-05-TR-E
Manufacturer ON Semiconductor
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 08+
Reference case SMD
Manufacturer ON Semiconductor
Manufacturer Homepage www.onsemi.com
Win Source Part Number 721634-2SK1646Y-05-TR-E
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SK1646Y-05-TR-E CAD Model

Description

Product Overview: 2SK1646Y-05-TR-E

The 2SK1646Y-05-TR-E is a cutting-edge power MOSFET designed and manufactured by ON Semiconductor, a leader in the semiconductor industry. This product is engineered to deliver high-speed switching performance, which is crucial for a wide range of power applications. It is a testament to ON Semiconductor's commitment to providing energy-efficient solutions that help reduce the global environmental footprint.

Key Features

  • Low On-Resistance: The 2SK1646Y-05-TR-E boasts a low on-resistance, which translates to reduced power loss during operation and enhances overall efficiency.
  • High-Speed Switching: Designed for applications that require swift transitions, this MOSFET offers high-speed switching capabilities, making it ideal for high-frequency power converters and inverters.
  • Enhanced Durability: The robust design of the 2SK1646Y-05-TR-E ensures it can withstand the rigors of demanding applications, offering a long operational lifespan.
  • Surface Mount Package: This MOSFET comes in a surface-mount package, facilitating easy integration into various circuit designs and contributing to a reduction in overall PCB size.

Applications

ON Semiconductor's 2SK1646Y-05-TR-E is suitable for a broad spectrum of applications, including:

  • DC/DC converters
  • Power management systems
  • Motor drives
  • Switching regulators
  • Uninterruptible power supplies (UPS)

Technical Specifications

  • Drain-Source Voltage (V<sub>DS): The MOSFET can handle a maximum drain-source voltage, ensuring compatibility with high-voltage applications.
  • Continuous Drain Current (I<sub>D): It supports a substantial continuous drain current, allowing it to manage significant power levels.
  • Gate-Source Voltage (V<sub>GS): The device operates within a specified gate-source voltage range, ensuring stable performance.
  • Total Power Dissipation (P<sub>D): With its power dissipation capabilities, this MOSFET can sustain optimal performance without overheating.

With its combination of efficiency, reliability, and high performance, the 2SK1646Y-05-TR-E from ON Semiconductor is an excellent choice for designers and engineers looking to improve their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2610 $58.7250
540+ $0.2148 $115.9920
835+ $0.2079 $173.5965
1,150+ $0.2010 $231.1500
1,480+ $0.1952 $288.8960
1,990+ $0.1744 $347.0560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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