ON Semiconductor 2SK3072-TB-E N-Channel MOSFET
The ON Semiconductor 2SK3072-TB-E is a high-quality N-Channel MOSFET designed to deliver efficient power management and switching with low on-resistance and minimal power loss. This semiconductor device is a perfect solution for a wide range of applications, including power supplies, motor controls, lighting, and automotive systems where energy efficiency is paramount.
Key Features
- Low On-Resistance: The 2SK3072-TB-E MOSFET features a low on-resistance, which significantly reduces conduction losses and improves overall system efficiency.
- High-Speed Switching: Engineered for fast switching applications, this MOSFET provides rapid turn-on and turn-off times, making it ideal for high-frequency operations.
- Low Gate Charge: The device has a low gate charge, which minimizes the power required to drive the gate, thus reducing the total power consumption of the system.
- High Avalanche Ruggedness: Built to withstand high-energy pulses in the avalanche and commutation modes, this MOSFET ensures reliability and durability in challenging conditions.
Specifications
Parameter
Value
Drain-to-Source Voltage (V<sub>DS)
60V
Continuous Drain Current (I<sub>D)
1A
Power Dissipation (P<sub>D)
0.9W
R<sub>DS(on)
0.5Ω
Package
PB-Free Leadless Halogen-Free
The 2SK3072-TB-E is available in a compact package that is both lead-free and halogen-free, contributing to environmental sustainability. It is designed to meet the rigorous standards of the automotive industry and is compliant with RoHS regulations, making it suitable for use in environmentally sensitive applications.
Whether you are designing a cutting-edge power management system or looking to upgrade existing equipment, the ON Semiconductor 2SK3072-TB-E N-Channel MOSFET offers the performance, efficiency, and reliability required to meet the demands of modern electronic applications.