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2SK3491-E

Part No 2SK3491-E
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description NCH 4V DRIVE SERIES / RF Mosfet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Active
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 855425-2SK3491-E
Ultra Librarian 3D Model Ultra Librarian 2SK3491-E CAD Model

Description

ON Semiconductor 2SK3491-E Power MOSFET

The 2SK3491-E is a high-performance N-channel power MOSFET brought to you by ON Semiconductor, a trusted name in the electronic component industry. This device is designed to meet the demanding requirements of power switching applications, offering a perfect blend of low on-state resistance and high switching speeds, making it suitable for a wide range of power management tasks.

Key Features

  • Low On-Resistance: The 2SK3491-E boasts an extremely low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in applications.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET can handle high-frequency operations, making it ideal for use in switching power supplies, DC-DC converters, and motor control circuits.
  • High Drain-Source Voltage: The device can withstand high drain-source voltages (V<sub>DSS), providing reliability and robustness in applications with high voltage requirements.
  • Gate Charge Optimization: The optimized gate charge (Q<sub>G) ensures lower switching losses and supports efficient operation at high switching frequencies.

Applications

The versatility of the 2SK3491-E MOSFET makes it a suitable choice for a diverse array of applications, including:

  • Power Supply Units (PSUs)
  • DC-DC Converters
  • Motor Drives and Controllers
  • Inverters
  • Lighting Systems
  • Automotive Applications

Product Specifications

The 2SK3491-E is encapsulated in a TO-220SIS package, which provides a solid balance between thermal performance and compactness. It can handle a continuous drain current (I<sub>D) of up to 10 A, and offers a maximum power dissipation (P<sub>D) that ensures stable operation even under high power conditions. The product is also characterized by a threshold voltage (V<sub>th) that ensures low-voltage drive capability.

ON Semiconductor's commitment to quality and performance is evident in the 2SK3491-E MOSFET. With its robust design and excellent electrical characteristics, this product stands out as an efficient solution for designers looking to optimize their power management systems.

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