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2SK3492-TL-E

Part No 2SK3492-TL-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description GENERAL PURPOSE TRANSISTOR / Bipolar (BJT) Transistor
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Active
Standard Package 700 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 906460-2SK3492-TL-E
Ultra Librarian 3D Model Ultra Librarian 2SK3492-TL-E CAD Model

Description

ON Semiconductor 2SK3492-TL-E N-Channel MOSFET

The 2SK3492-TL-E by ON Semiconductor is a high-performance N-Channel MOSFET designed to meet the needs of a wide range of electronic applications. This semiconductor device is known for its efficiency and reliability, making it an ideal choice for power management tasks in both commercial and industrial equipment.

Featuring a drain-to-source voltage (V<sub>DS) of 600V and a continuous drain current (I<sub>D) of 2A, the 2SK3492-TL-E is capable of handling moderate power levels while maintaining a low on-state resistance (R<sub>DS(on)). This low R<sub>DS(on) ensures reduced power losses and better thermal management, which is crucial for maintaining the longevity and performance of the device.

The 2SK3492-TL-E comes in a compact package, the TO-252 (DPAK), which is widely used in the industry due to its ability to efficiently dissipate heat and its ease of mounting on printed circuit boards (PCBs). The TO-252 package is also known for its robustness, making it suitable for applications that may be subject to mechanical stress or harsh environments.

This MOSFET is designed with fast switching speeds in mind, which is essential for applications requiring high-frequency operation. The fast switching capability reduces switching losses and improves overall efficiency, particularly in applications such as switch-mode power supplies, lighting ballasts, and DC-DC converters.

ON Semiconductor has equipped the 2SK3492-TL-E with built-in protection features, such as a gate-source voltage (V<sub>GS) rating that prevents gate oxide damage. Additionally, the device is characterized by its high avalanche energy absorption capability, providing an extra layer of security against unexpected voltage spikes, which is paramount for maintaining the integrity of the device under stressful conditions.

In summary, the 2SK3492-TL-E N-Channel MOSFET from ON Semiconductor is a versatile and robust component suitable for a variety of power applications. Its high voltage rating, low on-resistance, fast switching speeds, and reliable protection features make it a top choice for designers and engineers looking to enhance the performance and durability of their electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.8859 $58.8590
24+ $4.8291 $115.8984
38+ $4.6789 $177.7982
52+ $4.5276 $235.4352
66+ $4.3763 $288.8358
89+ $3.9235 $349.1915
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,980 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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