The ON Semiconductor 2SK3817-DL-E is a high-performance N-Channel MOSFET designed to deliver efficient power management and switching with low on-state resistance. This semiconductor device is an ideal choice for a wide range of applications, including power supplies, DC-DC converters, motor drives, and other power-intensive electronics.

Key Features

• Device Type: N-Channel MOSFET
• Package: TO-252 (DPAK) for surface mount technology
• Drain-Source Voltage (V<sub>DS): 60V, providing ample voltage handling for a variety of circuits
• Continuous Drain Current (I<sub>D): 10A, allowing for significant current flow through the device
• Power Dissipation (P<sub>D): 30W, ensuring the MOSFET can handle considerable power levels without overheating
• R<sub>DS(on): Low on-state resistance for improved efficiency and reduced power loss during operation
• Fast Switching Speed: Enhances performance in high-speed applications
• Gate Charge (Q<sub>G): Optimized for low gate charge, which reduces switching losses and improves overall efficiency

Applications

The 2SK3817-DL-E is suitable for a variety of electronic applications where efficient power control is required. Its robust design and reliable performance make it an excellent choice for:

• Switch Mode Power Supplies (SMPS)
• DC-DC Converters
• Power Inverter Systems
• Motor Control Circuits
• Automotive Applications
• High-Efficiency Power Management Designs

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability. The 2SK3817-DL-E MOSFET is manufactured with stringent quality control processes, ensuring high performance and durability for industrial and consumer applications. Its robust package is designed to withstand harsh environments while maintaining its electrical characteristics.

For detailed specifications, application notes, and additional resources, customers are encouraged to visit the ON Semiconductor website or contact their sales representative.