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2SK4065-DL-1E

Part No 2SK4065-DL-1E
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 100A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Max Gate Charge 220nC @ 10V
Max Input Capacitance 12200pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.65W (Ta), 90W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 50A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1004753-2SK4065-DL-1E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SK4065-DL-1E CAD Model

Description

Product Overview: 2SK4065-DL-1E from ON Semiconductor

The 2SK4065-DL-1E is a high-performance N-channel MOSFET produced by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed to meet the demanding requirements of a wide range of electronic applications, particularly in power management and switching circuits. Its advanced technology ensures efficient power handling and high-speed operation while maintaining low on-resistance and minimal power loss.

Key Features

  • Low On-Resistance: The device offers exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in applications.
  • High-Speed Switching: Designed for fast switching applications, the 2SK4065-DL-1E minimizes switching losses, making it suitable for high-frequency operations.
  • Voltage Rating: With a drain-to-source voltage (Vdss) rating of 60V, this MOSFET can handle moderate voltage applications with ease.
  • Current Capacity: It is capable of sustaining a continuous drain current (Id) of up to 50A, allowing it to drive high current loads.
  • Low Gate Charge: The reduced gate charge (Qg) ensures lower power consumption during switching, which is critical for power-sensitive designs.
  • Enhanced Durability: The device is encapsulated in a robust package that ensures long-term reliability and stability under various environmental conditions.

Applications

The versatile nature of the 2SK4065-DL-1E MOSFET makes it an ideal choice for a variety of applications, including:

  • Power supply units (PSUs)
  • DC/DC converters
  • Motor drives and controllers
  • Switching regulators
  • Automotive applications
  • LED lighting systems

Quality and Environmental Compliance

ON Semiconductor is committed to providing environmentally friendly products. The 2SK4065-DL-1E is manufactured with the environment in mind, ensuring that it meets various international standards for environmental compliance, such as RoHS. Customers can trust that they are choosing a product that not only delivers high performance but also supports environmentally responsible manufacturing practices.

With its combination of efficiency, reliability, and performance, the 2SK4065-DL-1E from ON Semiconductor is an excellent choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.6394 $58.2304
39+ $2.9868 $116.4852
60+ $2.8933 $173.5980
83+ $2.7997 $232.3751
107+ $2.7062 $289.5634
143+ $2.4267 $347.0181
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,740 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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