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SIHU6N62E-GE3

Part No SIHU6N62E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 620 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 578 pF @ 100 V
Power Dissipation (Max) 78W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package IPAK (TO-251)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number SIHU6
Other Names SIHU6N62E-GE3DKR,SIHU6N62E-GE3DKRINACTIVE,SIHU6N62E-GE3CT,SIHU6N62E-GE3TR,SIHU6N62E-GE3CT,SIHU6N62E-GE3TRINACTIVE,SIHU6N62E-GE3TR,SIHU6N62E-GE3DKR
Standard Package 75
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277871-SIHU6N62E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHU6N62E-GE3 CAD Model

Description

The Vishay Siliconix SIHU6N62E-GE3 MOSFET transistor is an N-channel FET type with a drain to source voltage of 620V and a continuous drain current of 6A @ 25°C.

  • Maximum On-Resistance: 900mOhm @ 3A and 10V
  • Gate Threshold Voltage: 4V @ 250µA
  • Power Dissipation: 78W @ Tc
  • Mounting Type: Through-hole
  • Package/Case: TO-251-3 short leads, IPak, TO-251AA
  • Gate Charge: 34 nC @ 10V
  • Input Capacitance: 578 pF @ 100Vds
  • Operating Temperature: -55°C to 150°C (TJ)
  • Packaging: Tube
  • Standard Package: 75
  • Alternative Names: SIHU6N62E-GE3DKR, SIHU6N62E-GE3DKRINACTIVE, SIHU6N62E-GE3CT, SIHU6N62E-GE3TR, and SIHU6N62E-GE3CT

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