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2SK4065-DL-E

Part No 2SK4065-DL-E
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 100A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 75V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate Charge (Qg) (Maximum) @ Vgs 220nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 12200pF @ 20V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 1.65W (Ta), 90W (Tc)
Rds On (Maximum) @ Id, Vgs 6 mOhm @ 50A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package SMP-FD
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 763008-2SK4065-DL-E
Family Name 2SK4065
Introduction Date July 04, 2006
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SK4065-DL-E CAD Model

Description

ON Semiconductor 2SK4065-DL-E Power MOSFET

The ON Semiconductor 2SK4065-DL-E is a high-performance N-Channel Power MOSFET designed to deliver efficient power management and conversion in a variety of applications. This semiconductor device is a testament to ON Semiconductor's commitment to providing innovative solutions for power electronic systems.

Key Features:

  • Low On-Resistance: The 2SK4065-DL-E boasts a low on-resistance, which reduces conduction losses and improves overall efficiency, making it ideal for high-efficiency power supplies.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is suitable for high-frequency operations, contributing to reduced switching losses and better performance in applications such as DC-DC converters.
  • High Breakdown Voltage: The device is designed to withstand high voltage conditions, ensuring reliability and robustness in environments where voltage spikes may occur.
  • Low Gate Charge: The reduced gate charge of the 2SK4065-DL-E allows for lower driving power, which is beneficial in minimizing the power required to control the MOSFET's switching.

Applications:

  • Switching power supplies
  • DC-DC converters
  • Motor drives
  • Power management systems

The 2SK4065-DL-E is housed in a TO-252 (DPAK) package, which provides a compact footprint while still offering excellent thermal performance. This makes it suitable for space-constrained applications while ensuring the device remains cool during operation.

ON Semiconductor's 2SK4065-DL-E is RoHS compliant, reflecting the company's dedication to environmental sustainability and the global effort to reduce hazardous substances in electronic components.

In summary, the 2SK4065-DL-E from ON Semiconductor is an efficient, reliable, and versatile N-Channel Power MOSFET that meets the demands of modern power electronic applications. Its combination of low on-resistance, high-speed switching, and robustness makes it a top choice for designers looking to optimize their power management systems.

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