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30C01S-TL-E

Part No 30C01S-TL-E
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description BIP NPN 0.4A 30V / RF Mosfet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Obsolete
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 855585-30C01S-TL-E
Ultra Librarian 3D Model Ultra Librarian 30C01S-TL-E CAD Model

Description

Product Overview: 30C01S-TL-E by ON Semiconductor

The 30C01S-TL-E, manufactured by ON Semiconductor, is a high-performance Schottky barrier rectifier designed for applications requiring low forward voltage drop and high surge current capability. This device is particularly suitable for use in power supply circuits, converters, free-wheeling diodes, and reverse battery protection applications.

Key Features

  • Low Forward Voltage Drop: The device offers a low forward voltage drop, ensuring high efficiency in applications where voltage conservation is critical.
  • High Surge Current Capability: With its robust construction, the 30C01S-TL-E can handle high surge currents, making it ideal for circuits that experience transient overvoltages.
  • Guard Ring Die Construction: The guard ring die construction provides enhanced reliability and long-term stability by protecting against voltage spikes and transient events.
  • Surface Mount Package: The device comes in a compact surface mount package, providing ease of integration into various circuit designs and saving board space.
  • Low Power Loss: Due to its Schottky barrier design, the device exhibits low power loss characteristics, contributing to overall energy savings in the system.
  • Environmentally Friendly: The 30C01S-TL-E is lead-free and RoHS compliant, making it an environmentally friendly option for green-conscious applications.

Applications

The versatility of the 30C01S-TL-E allows it to be used in a wide range of applications, including:

  • Switching power supplies
  • DC-DC converters
  • OR-ing diode in redundant power systems
  • Reverse battery protection
  • Automotive applications
  • Free-wheeling diodes in motor control circuits

Technical Specifications

The 30C01S-TL-E boasts a maximum repetitive reverse voltage (VRRM) of 30V, with a forward continuous current (IF) of 1A. The device's operating junction temperature ranges from -55°C to +150°C, accommodating a wide range of environmental conditions.

In conclusion, the 30C01S-TL-E from ON Semiconductor is a robust and efficient solution for designers looking to enhance the performance of their power management systems. Its low forward voltage drop, high surge capability, and compact form factor make it a valuable component in any power electronic design.

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