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3LP01M-TL-H

Part No 3LP01M-TL-H
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 0.1A MCP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V
Max Gate Charge 1.43nC @ 10V
Max Input Capacitance 7.5pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 10.4 Ohm @ 50mA, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 3-MCP
Dimension SC-70, SOT-323
Win Source Part Number 006136-3LP01M-TL-H
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 3LP01M-TL-H CAD Model

Description

Product Overview: 3LP01M-TL-H by ON Semiconductor

The 3LP01M-TL-H is a high-performance, low-power P-channel MOSFET developed by ON Semiconductor, a leading provider of semiconductor-based solutions. This particular MOSFET is designed to meet the rigorous demands of modern electronic circuits, providing efficient power management and switching capabilities.

With its compact SOT-23 package, the 3LP01M-TL-H is ideal for space-constrained applications. It is commonly used in portable electronics, power management systems, and other applications where a high-efficiency, low-voltage power MOSFET is required. Its small form factor does not compromise on power handling, as it is capable of supporting a continuous drain current, making it suitable for a wide range of applications.

The device features a low threshold voltage, ensuring that it can be easily driven by logic-level voltages, which is particularly beneficial in low-voltage applications. This characteristic allows the MOSFET to switch on and off with minimal voltage loss, contributing to the overall energy efficiency of the system.

Furthermore, the 3LP01M-TL-H boasts low on-resistance (R<sub>DS(on)), which minimizes conduction losses and improves overall system efficiency. This is an important attribute for battery-powered devices where extending battery life is crucial. Additionally, the device's fast switching speed enhances performance in high-frequency circuits, reducing switching losses and improving the response time of the system.

ON Semiconductor has also equipped the 3LP01M-TL-H with robust protection features. Its built-in thermal protection ensures that the device operates within safe temperature limits, preventing thermal runaway and enhancing system reliability. The MOSFET's high ESD immunity provides additional protection against electrostatic discharge events, which can be detrimental to electronic components.

In summary, the 3LP01M-TL-H from ON Semiconductor is a versatile and efficient solution for power switching and management applications. Its low-power characteristics, coupled with high switching speeds and compact packaging, make it an excellent choice for designers looking to optimize their power-sensitive designs for both performance and space.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6,330+ $0.0092 $58.2360
15,385+ $0.0075 $115.3875
23,810+ $0.0073 $173.8130
32,790+ $0.0071 $232.8090
42,375+ $0.0069 $292.3875
56,605+ $0.0062 $350.9510
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 290,100 pieces
MOQ: 6330 pcs
Order Increment : 1 pcs
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