The 3SK264-5-TG-E is a high-performance N-Channel RF MOSFET transistor designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This discrete semiconductor product is engineered to meet the demanding requirements of RF amplification and switching applications.

Key Features

• Voltage & Current: It operates at a drain-source voltage (Vds) of 10V, with a continuous drain current (Id) of 30mA, making it suitable for low-power operations.
• High Gain: The device boasts a high power gain, which is essential for amplifying weak radio frequency signals without significant loss of quality or performance.
• Low Noise Figure: With its low noise figure, the 3SK264-5-TG-E ensures clear signal amplification, which is critical in communication systems where signal clarity is paramount.
• High-Speed Switching: The transistor is designed for high-speed switching applications, allowing for efficient signal modulation and demodulation in RF circuits.
• Package: Housed in a small, surface-mount package (SOT-346), the 3SK264-5-TG-E is optimized for space-constrained applications and allows for high-density PCB layouts.

Applications

The 3SK264-5-TG-E is ideal for a wide range of applications, including:

• RF amplifiers in wireless communication systems
• Low-noise front-end amplifiers in receivers
• Oscillator circuits in various RF applications
• Switching applications in digital communication systems

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The 3SK264-5-TG-E is built with reliability in mind, ensuring stable performance over its entire lifespan. It is also compliant with RoHS standards, minimizing the environmental impact and making it suitable for use in eco-conscious applications.

Whether you're designing a cutting-edge communication device or looking to enhance an existing system, the 3SK264-5-TG-E from ON Semiconductor provides the performance and reliability needed for your RF applications.