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BAS70-04LT1G

Part No BAS70-04LT1G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Arrays
Description Rectifier Diode Schottky 0.07A 3-Pin SOT-23 T/R / DIODE ARRAY SCHOTTKY 70V SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Diode Configuration 1 Pair Series Connection
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 70V
Current - Average Rectified (Io) (per Diode) 100mA (DC)
Voltage - Forward (Vf) (Max) @ If 1V @ 15mA
Current - Reverse Leakage @ Vr 10μA @ 70V
Operating Temperature - Junction -55°C to 150°C
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 010925-BAS70-04LT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Portable Devices
Family Name BAS70-04L
Introduction Date May 12, 2004
ECCN EAR99
Country of Origin China, Malaysia , United States of America
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian BAS70-04LT1G CAD Model

Description

ON Semiconductor BAS70-04LT1G Schottky Diodes

The BAS70-04LT1G from ON Semiconductor is a highly efficient, surface-mount Schottky barrier diode designed for high-speed switching applications. This diode is characterized by its low forward voltage drop and fast switching speed, making it an optimal choice for a variety of electronic circuits where power efficiency and speed are crucial. The BAS70-04LT1G is commonly used in applications such as voltage clamping, protection circuits, and as a rectifier in high-frequency inverters and DC/DC converters.

This Schottky diode features a dual-series configuration, packaged in a compact SOT-23 package, which is ideal for space-constrained applications. The small form factor does not compromise its electrical performance, as it can handle a continuous forward current of 70 mA and has a peak repetitive reverse voltage of 40 V. Additionally, the BAS70-04LT1G boasts a low forward voltage drop, typically just 410 mV at 15 mA, which enhances the overall efficiency of the systems it is integrated into.

The BAS70-04LT1G is designed with reliability in mind, featuring a guard ring for stress protection which ensures stable operation over its full lifetime. The device is also characterized by its low leakage current, which is typically less than 0.2 µA at 25 °C, contributing to its excellent performance in low-power applications.

ON Semiconductor has ensured that the BAS70-04LT1G meets the stringent requirements of the RoHS directive, making it a lead-free and environmentally friendly choice for manufacturers looking to create green products. The diode's operating temperature range spans from -55 °C to +125 °C, allowing for use in various environments and applications.

In summary, the BAS70-04LT1G from ON Semiconductor is a robust, efficient, and versatile Schottky diode that is suitable for a wide range of high-speed and low-power applications. Its small footprint, combined with its high-speed switching capabilities and low power loss, make it a valuable component in modern electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
685+ $0.0732 $50.1420
1,665+ $0.0601 $100.0665
2,580+ $0.0582 $150.1560
3,550+ $0.0564 $200.2200
4,590+ $0.0545 $250.1550
6,150+ $0.0488 $300.1200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 162,480 pieces
MOQ: 685 pcs
Order Increment : 1 pcs
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