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BC846AWT1

Part No BC846AWT1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 65V 0.1A SC70-3 / Bipolar (BJT) Transistor NPN 65 V 100 mA 100MHz 150 mW Surface Mount SC-70-3 (SOT323)
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA, 5V
Power - Max 150 mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323)
Base Product Number BC846
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 863615-BC846AWT1
Ultra Librarian 3D Model Ultra Librarian BC846AWT1 CAD Model

Description

ON Semiconductor BC846AWT1 Bipolar Transistor

The BC846AWT1 from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This compact transistor offers a perfect solution for designers looking for a device with low power consumption and a small footprint to fit in space-constrained applications.

With a collector-emitter voltage (Vceo) of 65V and collector current (Ic) of up to 100mA, the BC846AWT1 is capable of handling moderate power levels while maintaining high efficiency. The device also features a low collector-emitter saturation voltage, which reduces power losses and improves overall system efficiency. This makes it an ideal choice for low voltage applications such as signal processing, power management, and other electronic circuits requiring a reliable switching component.

The BC846AWT1 is housed in a SOT-323 package, which is known for its small size and excellent power dissipation capabilities. This package is suitable for automated assembly processes, and its small size enables a high-density mounting, making it a great choice for portable and miniaturized electronic devices.

Key specifications of the BC846AWT1 include:

  • Transistor Polarity: NPN
  • Collector-Emitter Voltage Vceo: 65V
  • Collector Current Ic: 100mA
  • DC Current Gain (hFE): 110 to 450 at 2mA Ic
  • Power Dissipation Pd: 250mW
  • Transition Frequency fT: 100MHz
  • Operating and Storage Junction Temperature Range: -55°C to +150°C

ON Semiconductor's commitment to quality ensures that the BC846AWT1 meets the stringent requirements for reliability and performance in the industry. Whether used in commercial, industrial, or consumer electronic products, this transistor provides a robust and efficient solution for a wide range of applications. Additionally, ON Semiconductor provides comprehensive technical support and resources to aid designers in integrating the BC846AWT1 into their projects seamlessly.

With its excellent performance characteristics and small package size, the BC846AWT1 from ON Semiconductor is an excellent choice for designers looking to optimize their circuit designs without compromising on power and efficiency.

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