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Same model may have multiple batches, images only for reference.
IPW65R080CFDAFKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPW65R080CFDAFKSA1

Part No IPW65R080CFDAFKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 700V 43.3A TO247 / Trans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube
Datasheet
IPW65R080CFDAFKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 43.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 1.76mA
Gate Charge (Qg) (Maximum) @ Vgs 161nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 4440pF @ 100V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 391W (Tc)
Rds On (Maximum) @ Id, Vgs 80 mOhm @ 17.6A, 10V
Operating Temperature Range -40°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO247-3
Package TO-247-3
Win Source Part Number 776939-IPW65R080CFDAFKSA1
Popularity Medium
Supply and Demand Status Limited
Family Name IPW65R080CFDA
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian IPW65R080CFDAFKSA1 CAD Model

Description

The Infineon Technologies IPW65R080CFDAFKSA1 is a high-performance MOSFET that is designed for use in a range of electronic devices.

  • Drain-Source Voltage: 650V
  • Continuous Drain Current: 43.3A @ 25°C
  • Gate-Source Threshold Voltage: 4.5V @ 1.76mA
  • Maximum Power Dissipation: 391W (Tc)

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