ON Semiconductor BC847AWT1G - General Purpose Transistor

The BC847AWT1G is a high-quality NPN bipolar junction transistor (BJT) produced by ON Semiconductor, a leader in energy-efficient innovations. This versatile transistor is designed for general-purpose switching and amplification applications, making it a staple component in a wide range of electronic circuits.

Key Features:

• Device Type: General-purpose NPN transistor
• Package: SOT-323, which is a small surface-mount package, ideal for space-constrained applications
• Configuration: Single
• Collector-Emitter Voltage (VCEO): 45 V, which determines the maximum voltage the transistor can handle from its collector to its emitter
• Collector Current (IC): 100 mA, indicating the maximum current that can flow through the collector of the transistor
• DC Current Gain (hFE): 420 at 2 mA, which represents the transistor's ability to amplify the input signal
• Power Dissipation: 200 mW, which is the maximum power the transistor can dissipate without damage
• Operating Temperature Range: -55°C to +150°C, ensuring reliable operation under extreme conditions
• RoHS Compliant: Yes, minimizes the environmental impact by restricting the use of certain hazardous substances

Applications:

The BC847AWT1G is suitable for a variety of electronic applications, including:

• Switching and amplification in consumer electronics
• Signal processing in telecommunication systems
• Power management in portable devices
• Driver stages in high-fidelity audio equipment
• Control circuits in embedded systems

Quality and Reliability:

ON Semiconductor is committed to providing high-quality products. The BC847AWT1G transistor is manufactured with stringent quality control processes, ensuring high reliability and performance for critical applications. With its excellent gain characteristics and low noise figure, this transistor is an excellent choice for designers looking for a robust and efficient solution for their electronic designs.