ON Semiconductor BC847C1G NPN Bipolar Transistor
The BC847C1G is a high-quality NPN bipolar (BJT) transistor from ON Semiconductor, designed to meet the needs of a wide range of electronic applications. This small-signal transistor is notable for its low voltage operation and is primarily used for amplification and switching purposes.
Key Features
- Transistor Type: NPN - This allows the component to efficiently control the flow of current, making it suitable for amplification and switching applications.
- Package / Case: SOT-23-3 - The compact surface-mount package is ideal for space-constrained applications.
- Collector-Emitter Voltage (Vceo): 45V - The BC847C1G can handle moderate voltage levels, ensuring reliability in various circuits.
- Collector Current (Ic Max): 100mA - This current rating indicates the transistor can manage continuous collector current up to 100mA, making it suitable for low to medium power applications.
- DC Current Gain (hFE): 420 to 800 - The high current gain demonstrates the transistor's efficiency in amplifying the input signal.
- Power Dissipation (Pd): 250mW - This is the maximum power the transistor can dissipate without damage, which is adequate for many electronic applications.
- Operating Temperature Range: -55°C to +150°C - The BC847C1G can operate effectively over a wide temperature range, making it suitable for harsh environments.
Applications
The BC847C1G is versatile and can be used in various application areas, including:
- General-purpose switching and amplification
- Audio amplifiers and pre-amps
- Signal processing
- Driver stages in hi-fi amplifiers and television circuits
Quality and Reliability
ON Semiconductor is known for its commitment to quality, and the BC847C1G is no exception. It is designed to meet the stringent requirements of the electronic industry, ensuring long-term reliability and performance. Whether for commercial, industrial, or educational use, this transistor is a solid choice for designers and engineers looking for a dependable component.