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BC847CDW1T1G

Part No BC847CDW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 45V 0.1A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 600mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 420 @ 2mA, 5V
Maximum Power Dissipation 380mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 011122-BC847CDW1T1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BC847CDW1T1G CAD Model

Description

ON Semiconductor BC847CDW1T1G NPN Bipolar Transistor

The BC847CDW1T1G from ON Semiconductor is a high-performance NPN bipolar (BJT) transistor designed for general-purpose and switching applications. This versatile component is housed in a compact SOT-323 package, making it ideal for space-constrained applications where efficient use of PCB real estate is crucial.

Key Features

  • Transistor Type: NPN - This transistor type allows for high current gain and is commonly used in signal processing and amplification.
  • Package / Case: SOT-323 - The small surface-mount package is suitable for automated assembly processes and helps in reducing the overall size of the electronic device.
  • Collector-Emitter Voltage (Vceo): 45V - This rating indicates the maximum voltage the transistor can withstand across the collector-emitter junction without breakdown.
  • Collector Current (Ic): 100mA - The maximum continuous current that can flow through the collector of the transistor.
  • Power Dissipation (Pd): 225mW - The amount of power that the transistor can dissipate without exceeding its maximum operating temperature.
  • DC Current Gain (hFE): 420 at 2mA, 5V - A measure of the transistor's ability to amplify the input current at the base to a higher current at the collector.
  • Operating Temperature Range: -55°C to +150°C - Ensures reliable performance across a wide range of environmental conditions.

Applications

The BC847CDW1T1G is suitable for a broad spectrum of applications, including but not limited to:

  • Switching and Amplification
  • Audio Amplifiers
  • Signal Processing
  • Driver Stages in Hi-Fi Amplifiers and Television Circuits
  • Portable Devices
  • Power Management Solutions

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the BC847CDW1T1G is no exception. This transistor is manufactured to meet the highest industry standards, ensuring reliable operation and longevity in your electronic designs. Whether you are developing consumer electronics, industrial systems, or sophisticated communication devices, the BC847CDW1T1G offers the performance and reliability you need.

For detailed specifications and application notes, designers are encouraged to consult the official datasheet and product documentation available from ON Semiconductor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
980+ $0.0511 $50.0780
2,390+ $0.0419 $100.1410
3,695+ $0.0406 $150.0170
5,090+ $0.0393 $200.0370
6,580+ $0.0380 $250.0400
8,800+ $0.0341 $300.0800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 84,398 pieces
MOQ: 980 pcs
Order Increment : 1 pcs
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