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BC847CTT1G

Part No BC847CTT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 45V 0.1A SC75-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Cut Reel
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 600mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 420 @ 2mA, 5V
Maximum Power Dissipation 200mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-75, SOT-416
Win Source Part Number 121231-BC847CTT1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BC847CTT1G CAD Model

Description

ON Semiconductor BC847CTT1G Bipolar Transistor

The ON Semiconductor BC847CTT1G is a high-quality NPN bipolar junction transistor (BJT) that is widely used in electronic circuits for amplification and switching purposes. This versatile and reliable transistor is designed to meet the needs of a broad range of applications, making it a popular choice among engineers and electronics enthusiasts alike.

Key Features

  • Transistor Type: The BC847CTT1G is an NPN transistor, which is a type of bipolar junction transistor that uses a negative-positive-negative configuration for current flow.
  • Package: It is housed in a small SOT-23 surface-mount package, which is ideal for use in space-constrained applications.
  • Current Rating: With a continuous collector current rating of 100 mA, it is suitable for a range of low to medium power applications.
  • Voltage Ratings: The collector-emitter voltage (Vceo) is rated at 45V, and the collector-base voltage (Vcbo) is rated at 50V, ensuring it can handle moderate voltage levels.
  • Power Dissipation: The device can dissipate up to 250 mW of power, making it suitable for various electronic circuits without the need for excessive heat sinking.
  • Gain Bandwidth Product: It offers a gain bandwidth product (fT) of 100 MHz, which is indicative of its capability to operate effectively at high frequencies.
  • DC Current Gain: The transistor has a high DC current gain (hFE) range, which allows for significant signal amplification in electronic circuits.

Applications

The BC847CTT1G is commonly used in a wide array of applications, such as:

  • General-purpose switching and amplification
  • Audio amplifiers and pre-amplifiers
  • Signal processing
  • Driver stages in hi-fi amplifiers and television circuits
  • Control systems and automation

ON Semiconductor's commitment to quality ensures that the BC847CTT1G transistor is manufactured to the highest standards, providing reliable performance for both commercial and industrial applications. Its small footprint, combined with its electrical characteristics, make it an excellent choice for designing compact, efficient, and high-performing electronic devices.

Whether you are designing a new circuit or troubleshooting an existing one, the ON Semiconductor BC847CTT1G NPN bipolar transistor is a component that you can trust to deliver consistent results and durable operation.

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Pricing & Ordering

Quantity Unit Price Ext. Price
200+ $0.2942 $58.8400
480+ $0.2414 $115.8720
745+ $0.2339 $174.2555
1,025+ $0.2264 $232.0600
1,320+ $0.2188 $288.8160
1,770+ $0.1961 $347.0970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,500 pieces
MOQ: 200 pcs
Order Increment : 1 pcs
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