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BC848BPDW1T1

Part No BC848BPDW1T1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS GP BJT NPN/PNP 30V 0.1A / Bipolar (BJT) Transistor
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Active
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 863634-BC848BPDW1T1
Ultra Librarian 3D Model Ultra Librarian BC848BPDW1T1 CAD Model

Description

ON Semiconductor BC848BPDW1T1 Bipolar Transistor

The BC848BPDW1T1 from ON Semiconductor is a cutting-edge bipolar (BJT) transistor designed for high-efficiency switching and amplification applications. This small signal transistor is a pivotal component in modern electronics, offering a blend of low voltage operation and high current handling capabilities.

Key Features:

  • Transistor Type: NPN - This means that the primary charge carriers responsible for current flow are electrons, allowing for efficient conduction between the collector and emitter when a positive voltage is applied to the base.
  • Package: The BC848BPDW1T1 comes in a space-saving SOT-363 package, making it ideal for use in applications where board space is at a premium.
  • Configuration: Dual - This device features two transistors in a single package, providing matched pair performance that is beneficial for differential amplifiers and push-pull stages.
  • Collector-Emitter Voltage (Vceo): 30V - It can handle a maximum voltage of 30 volts between the collector and emitter when the base is open.
  • Collector Current (Ic): 100mA - The transistor can support a continuous collector current of up to 100 milliamperes, making it suitable for driving moderate loads.
  • DC Current Gain (hFE): 200 to 450 - This range of current gain ensures that the transistor can amplify the input signal effectively, making it a reliable choice for various amplification needs.
  • Power Dissipation (Pd): 250mW - The maximum power dissipation is 250 milliwatts, which indicates the amount of power it can handle before overheating.
  • Operating Temperature: -55°C to +150°C - Its wide operating temperature range ensures stability and functionality across various environmental conditions.

Whether it's for signal processing, audio amplification, or as a switch in digital circuits, the ON Semiconductor BC848BPDW1T1 offers reliability and performance. Its dual configuration and compact form factor make it a versatile choice for designers looking to optimize their circuit designs without compromising on quality or efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
385+ $0.1502 $57.8270
935+ $0.1236 $115.5660
1,460+ $0.1190 $173.7400
2,000+ $0.1155 $231.0000
2,580+ $0.1120 $288.9600
3,450+ $0.1005 $346.7250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,450 pieces
MOQ: 385 pcs
Order Increment : 1 pcs
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